{"title":"用于无线超宽带定位系统的130nm CMOS超低功耗检测电路","authors":"C. D. Roover, M. Steyaert","doi":"10.1109/ESSCIRC.2009.5325949","DOIUrl":null,"url":null,"abstract":"This paper presents two detection circuits with an ultra low power consumption in the nW-range. A voltage detection circuit is designed and measured of which the output switches if the supply voltage reaches 1V. It consumes an average current of merely 3nA. Also a power dip detection circuit is designed and measured which detects if an RF-signal is present at the input. The minimal needed input power is −24.5dBm, and it operates from a supply voltage of 0.5V up to 1V and consumes only 5nW to 65nW respectively when active. It operates with a carrier frequency from 40MHz up to 900MHz. It can serve as an OOK-demodulator for bitrates up to 6.67kbps. The die area of both circuits combined, excluding buffers and including decoupling capacitors, is 310µm×550µm.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Ultra low power detection circuits in 130nm CMOS for a wireless UWB localization system\",\"authors\":\"C. D. Roover, M. Steyaert\",\"doi\":\"10.1109/ESSCIRC.2009.5325949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents two detection circuits with an ultra low power consumption in the nW-range. A voltage detection circuit is designed and measured of which the output switches if the supply voltage reaches 1V. It consumes an average current of merely 3nA. Also a power dip detection circuit is designed and measured which detects if an RF-signal is present at the input. The minimal needed input power is −24.5dBm, and it operates from a supply voltage of 0.5V up to 1V and consumes only 5nW to 65nW respectively when active. It operates with a carrier frequency from 40MHz up to 900MHz. It can serve as an OOK-demodulator for bitrates up to 6.67kbps. The die area of both circuits combined, excluding buffers and including decoupling capacitors, is 310µm×550µm.\",\"PeriodicalId\":258889,\"journal\":{\"name\":\"2009 Proceedings of ESSCIRC\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Proceedings of ESSCIRC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2009.5325949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra low power detection circuits in 130nm CMOS for a wireless UWB localization system
This paper presents two detection circuits with an ultra low power consumption in the nW-range. A voltage detection circuit is designed and measured of which the output switches if the supply voltage reaches 1V. It consumes an average current of merely 3nA. Also a power dip detection circuit is designed and measured which detects if an RF-signal is present at the input. The minimal needed input power is −24.5dBm, and it operates from a supply voltage of 0.5V up to 1V and consumes only 5nW to 65nW respectively when active. It operates with a carrier frequency from 40MHz up to 900MHz. It can serve as an OOK-demodulator for bitrates up to 6.67kbps. The die area of both circuits combined, excluding buffers and including decoupling capacitors, is 310µm×550µm.