用于基站应用的高功率AlGaN/GaN异质结场效应管

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367769

Y. Ando, Y. Okamoto, T. Nakayama, T. Inoue, K. Hataya, H. Miyamoto, M. Senda, K. Hirata, M. Kosaki, N. Shibata, M. Kuzuhara

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引用次数: 2

摘要

本工作描述了我们在SiC衬底上开发的高功率AlGaN/GaN异质结场效应管。据我们所知，203 W和4 W的Psat值分别是GaN场效应管在2 GHz和30 GHz时达到的最高值。我们相信氮化镓场效应管技术将在未来的基站系统中发挥主导作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High power AlGaN/GaN heterojunction FETs for base station applications

This work describes high power AlGaN/GaN heterojunction FETs on SiC substrates which we have developed. To our knowledge, Psat values of 203 W and 4 W are the highest ever achieved at 2 GHz and 30 GHz, respectively, for GaN FETs. We believe that GaN FET technology will play a dominant role in future base station systems.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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