800V集成DMOS-IGBT/PiN或mps -整流电源器件

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239975

R. Natarajan, K. Varadarajan, C. Hitchcock, T. Chow

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引用次数: 0

摘要

提出了一种将非穿孔DMOS绝缘栅双极晶体管与快速开关、反并联引脚或合并引脚肖特基(MPS)整流器集成在一起的新型功率器件，并进行了实验验证。将反并联整流器集成在电源开关内，降低了电源模块的成本、组件数量和封装寄生。器件集成是通过IGBT和PiN/MPS整流器并排放置在同一芯片中，两个器件共享公共终端来实现的。制造设计的实验特性表明，与分立器件相比，集成器件中具有竞争性IGBT和二极管性能的成功器件集成。与引脚相比，由于MPS结构，反向峰值电流减少30%，反向恢复电荷减少45%，反并联整流器的反向恢复性能得到了明显改善。

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An 800V integrated DMOS-IGBT/PiN or MPS-rectifier power device

A novel power device that integrates a non-punchthrough DMOS insulated gate bipolar transistor with a fast-switching, anti-parallel PiN or merged pin Schottky (MPS) rectifier is proposed and experimentally demonstrated. Integration of the anti-parallel rectifier within the power switch reduces cost, component-count and packaging parasitic of the power module. Device integration is achieved through side-by-side placement of the IGBT and PiN/MPS rectifier in the same die with both devices sharing common terminals. Experimental characteristics of the fabricated designs indicate successful device integration with competitive IGBT and diode performance in the integrated device, as compared to discrete devices. Improved reverse recovery performance of the antiparallel rectifier is evident from 30% reduction in reverse peak current and 45% reduction in reverse recovery charge due to the MPS structure as compared to a PiN.

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来源期刊

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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