在绝缘层上低温生长高锡ssi多晶

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874680

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, S. Zaima

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引用次数: 5

摘要

通过对聚硅层和聚sisn层的对比研究，发现Sn的掺入对降低结晶温度是有效的。此外，我们还发现，在150℃的低温生长条件下，在SiO2上形成取代锡含量约为30%的SiSn多晶，有望成为直接过渡半导体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers

Comparative study between the poly-Si and the poly-SiSn layers reveals that the Sn incorporation is effective to decrease the crystallization temperature. Also, we found that the formation of SiSn polycrystal with a substitutional Sn content of around 30%, which is expected as a direct transition semiconductor, becomes possible on SiO2 at a low temperature growth of 150°C.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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