多孔砷化镓的拉曼散射和光致发光

2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2020-09-24 DOI:10.1109/APEDE48864.2020.9255498

D. Kochnev, D. Terin

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引用次数: 1

摘要

通过测量拉曼散射，研究了阳极蚀刻得到的多孔砷化镓层的光学和结构特性。描述了其拉曼光谱，并与单晶砷化镓的拉曼光谱进行了比较。利用存在光致发光的拉曼光谱区计算了光致发光光谱。利用所得的PL光谱定量估计了多孔层中纳米晶体的尺寸。对数据的分析使我们得出结论，在多孔砷化镓纳米晶体中存在量子尺寸效应。

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Raman Scattering and Photoluminescence of Porous GaAs

Raman scattering have been measured to study optical and structural properties of porous GaAs layers obtained by anodic etching. The Raman spectra are described and compared with the Raman spectra of single-crystal GaAs. The photoluminescence (PL) spectra were calculated using the Raman spectral regions with the presence of photoluminescence. The obtained PL spectra were used to quantitatively estimate the size of nanocrystallites in the porous layer. Analysis of the data allowed us to conclude that the quantum size effect is present in porous GaAs nanocrystallites.

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2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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