应用数值孔径增大透镜的宽视场共聚焦集成电路亚表面成像

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI:10.1109/LEOS.2007.4382516

F. H. Koklu, A. Vamivakas, J. I. Quesnel, S. Ippolito, B. Goldberg, M. Unlu

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引用次数: 1

摘要

我们报告了一个定制的红外宽视场显微镜的横向空间分辨率为0.37 μ m，同时从背面成像硅集成电路的地下特征。此外，可以区分2.65 μ m的多晶硅层和金属层。

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Subsurface Imaging of Integrated Circuits with Widefield and Confocal Microscopy Using Numerical Aperture Increasing Lens

We report a lateral spatial resolution of 0.37 mum with a custom infrared widefield microscope while imaging subsurface features in silicon integrated circuits from backside. In addition, 2.65 mum apart polysilicon and metal layers can be differentiated.

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LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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