双栅TFET与异质介电双栅TFET的比较分析

2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC) Pub Date : 2018-10-01 DOI:10.1109/AESPC44649.2018.9033293

S. Sahu, S. K. Mohapatra, R. Goswami

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引用次数: 3

摘要

本文采用TCAD仿真方法对异介电双栅TFET (HD-DG TFET)与传统DG-TFET的性能进行了比较和分析。本文报道了不同介质材料和源掺杂浓度对漏极电流的影响。观察到低泄漏电流(IOFF)与改进的电流和更好的亚阈值摆幅的HD-DG TFET。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative Analysis of Double Gate TFET and Hetero Dielectric Double Gate TFET

This paper compares and analyzes the performance of Hetero Dielectric Double Gate TFET (HD-DG TFET) with that of conventional DG-TFET using TCAD simulation. This paper reports the influence of various hetero dielectric materials and source doping concentrations on drain current. A low leakage current (IOFF) is observed with an improved on current and a better subthreshold swing for HD-DG TFET.

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2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC)

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