{"title":"未切削切屑厚度与边缘半径比对单晶铜纳米级切削行为影响的研究:MD模拟方法","authors":"A. Sharma, Prabhat Ranjan, R. Balasubramaniam","doi":"10.1177/2516598420937638","DOIUrl":null,"url":null,"abstract":"Extremely small cutting depths in nanoscale cutting makes it very difficult to measure the thermodynamic properties and understand the underlying mechanism and behavior of workpiece material. Highly precise single-crystal Cu is popularly employed in optical and electronics industries. This study, therefore, implements the molecular dynamics technique to analyze the cutting behavior and surface and subsurface phenomenon in the nanoscale cutting of copper workpieces with a diamond tool. Molecular dynamics simulation is carried out for different ratios of uncut chip thickness (a) to cutting edge radius (r) to investigate material removal mechanism, cutting forces, surface and subsurface defects, material removal rate (MRR), and stresses involved during the nanoscale cutting process. Calculation of forces and amount of plowing indicate that a/r = 0.5 is the critical ratio for which the average values of both increase to maximum. Material deformation mechanism changes from shear slip to shear zone deformation and then to plowing and elastic rubbing as the cutting depth/uncut chip thickness is reduced. The deformation during nano-cutting in terms of dislocation density changes with respect to cutting time. During the cutting process, it is observed that various subsurface defects like point defects, dislocations and dislocation loops, stacking faults, and stair-rod dislocation take place.","PeriodicalId":129806,"journal":{"name":"Journal of Micromanufacturing","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Investigation of effect of uncut chip thickness to edge radius ratio on nanoscale cutting behavior of single crystal copper: MD simulation approach\",\"authors\":\"A. Sharma, Prabhat Ranjan, R. Balasubramaniam\",\"doi\":\"10.1177/2516598420937638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Extremely small cutting depths in nanoscale cutting makes it very difficult to measure the thermodynamic properties and understand the underlying mechanism and behavior of workpiece material. Highly precise single-crystal Cu is popularly employed in optical and electronics industries. This study, therefore, implements the molecular dynamics technique to analyze the cutting behavior and surface and subsurface phenomenon in the nanoscale cutting of copper workpieces with a diamond tool. Molecular dynamics simulation is carried out for different ratios of uncut chip thickness (a) to cutting edge radius (r) to investigate material removal mechanism, cutting forces, surface and subsurface defects, material removal rate (MRR), and stresses involved during the nanoscale cutting process. Calculation of forces and amount of plowing indicate that a/r = 0.5 is the critical ratio for which the average values of both increase to maximum. Material deformation mechanism changes from shear slip to shear zone deformation and then to plowing and elastic rubbing as the cutting depth/uncut chip thickness is reduced. The deformation during nano-cutting in terms of dislocation density changes with respect to cutting time. During the cutting process, it is observed that various subsurface defects like point defects, dislocations and dislocation loops, stacking faults, and stair-rod dislocation take place.\",\"PeriodicalId\":129806,\"journal\":{\"name\":\"Journal of Micromanufacturing\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micromanufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1177/2516598420937638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micromanufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1177/2516598420937638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of effect of uncut chip thickness to edge radius ratio on nanoscale cutting behavior of single crystal copper: MD simulation approach
Extremely small cutting depths in nanoscale cutting makes it very difficult to measure the thermodynamic properties and understand the underlying mechanism and behavior of workpiece material. Highly precise single-crystal Cu is popularly employed in optical and electronics industries. This study, therefore, implements the molecular dynamics technique to analyze the cutting behavior and surface and subsurface phenomenon in the nanoscale cutting of copper workpieces with a diamond tool. Molecular dynamics simulation is carried out for different ratios of uncut chip thickness (a) to cutting edge radius (r) to investigate material removal mechanism, cutting forces, surface and subsurface defects, material removal rate (MRR), and stresses involved during the nanoscale cutting process. Calculation of forces and amount of plowing indicate that a/r = 0.5 is the critical ratio for which the average values of both increase to maximum. Material deformation mechanism changes from shear slip to shear zone deformation and then to plowing and elastic rubbing as the cutting depth/uncut chip thickness is reduced. The deformation during nano-cutting in terms of dislocation density changes with respect to cutting time. During the cutting process, it is observed that various subsurface defects like point defects, dislocations and dislocation loops, stacking faults, and stair-rod dislocation take place.