未切削切屑厚度与边缘半径比对单晶铜纳米级切削行为影响的研究:MD模拟方法

A. Sharma, Prabhat Ranjan, R. Balasubramaniam
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引用次数: 5

摘要

由于纳米切削的切削深度非常小,因此很难测量工件材料的热力学性质和理解其潜在的机理和行为。高精度单晶铜广泛应用于光学和电子工业。因此,本研究采用分子动力学技术分析了金刚石刀具纳米切削铜工件的切削行为和表面及亚表面现象。对不同的未切削切屑厚度(a)与切削刃半径(r)之比进行分子动力学模拟,研究纳米级切削过程中材料去除机理、切削力、表面和亚表面缺陷、材料去除率(MRR)和应力。通过对犁耕力和犁耕量的计算可知,a/r = 0.5是两者平均值增大到最大值的临界比值。随着切削深度/未切削切屑厚度的减小,材料的变形机制由剪切滑移转变为剪切带变形,再转变为犁地和弹性摩擦。在纳米切削过程中,位错密度随切削时间的变化而变化。在切削过程中,观察到各种亚表面缺陷,如点缺陷、位错和位错环、层错和阶梯位错。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of effect of uncut chip thickness to edge radius ratio on nanoscale cutting behavior of single crystal copper: MD simulation approach
Extremely small cutting depths in nanoscale cutting makes it very difficult to measure the thermodynamic properties and understand the underlying mechanism and behavior of workpiece material. Highly precise single-crystal Cu is popularly employed in optical and electronics industries. This study, therefore, implements the molecular dynamics technique to analyze the cutting behavior and surface and subsurface phenomenon in the nanoscale cutting of copper workpieces with a diamond tool. Molecular dynamics simulation is carried out for different ratios of uncut chip thickness (a) to cutting edge radius (r) to investigate material removal mechanism, cutting forces, surface and subsurface defects, material removal rate (MRR), and stresses involved during the nanoscale cutting process. Calculation of forces and amount of plowing indicate that a/r = 0.5 is the critical ratio for which the average values of both increase to maximum. Material deformation mechanism changes from shear slip to shear zone deformation and then to plowing and elastic rubbing as the cutting depth/uncut chip thickness is reduced. The deformation during nano-cutting in terms of dislocation density changes with respect to cutting time. During the cutting process, it is observed that various subsurface defects like point defects, dislocations and dislocation loops, stacking faults, and stair-rod dislocation take place.
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