Eun-Seok Choi, Se-Jun Kim, Soon-Ok Seo, Hyunseung Yoo, Kyoung-Hwan Park, Sung-Wook Jung, Se-yun Lim, H. Joo, Gyo-Ji Kim, Sang-Bum Lee, Sang-Hyun Oh, J. Om, J. Yi, Seok-Kiu Lee
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Chip Level Reliability of MANOS Cells under Operating Conditions
MT reliability of MANOS cell was examined from cell array. Lots of retention tail bits occurred even at RT. The fail cells were classified as the manner of q-loss. Defective cell lost abundant charge at early stage, while the q-loss rate of worse cell was faster and lasted in a certain period. Si-cluster in our nitride was supposed to make the worse cell, and this cell redeemed its retention capability by reducing shallow trap in Si-rich nitride.
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