{"title":"低功耗0.4-2.3GHz NB-IoT UE接收机,具有- 15dBm耐oob射频前端","authors":"Hassan Ali, A. Mohieldin, M. Aboudina","doi":"10.1109/ICM50269.2020.9331505","DOIUrl":null,"url":null,"abstract":"This paper presents the system and circuit level design of a NB-IoT receiver (RX) based on 3GPP Technical Specification (TS) 36.101. This design targets serving many NB-IoT operation bands, so no off-chip filter is used. This dictates large linearity specification on the RF front end to avoid desensitization by −15dBm out-of-band blockers (OOBs). Large linearity specification leads to large power consumption. A solution is proposed to reduce power consumption of the RF front end, while achieving high gain and high linearity. The proposed RF front end provides 29.5dB gain and −10.9dBm IIP3 while consuming 2mW from a single 1.1V power supply. The solution includes adding gain programmability to conventional resistive feedback LNA to relax the trade-off between linearity and power consumption. The RF front end is designed using a 40nm CMOS technology and occupies an area of 0.2mm2.","PeriodicalId":243968,"journal":{"name":"2020 32nd International Conference on Microelectronics (ICM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Low-Power 0.4–2.3GHz NB-IoT UE Receiver with −15dBm OOB-Tolerant RF Front End\",\"authors\":\"Hassan Ali, A. Mohieldin, M. Aboudina\",\"doi\":\"10.1109/ICM50269.2020.9331505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the system and circuit level design of a NB-IoT receiver (RX) based on 3GPP Technical Specification (TS) 36.101. This design targets serving many NB-IoT operation bands, so no off-chip filter is used. This dictates large linearity specification on the RF front end to avoid desensitization by −15dBm out-of-band blockers (OOBs). Large linearity specification leads to large power consumption. A solution is proposed to reduce power consumption of the RF front end, while achieving high gain and high linearity. The proposed RF front end provides 29.5dB gain and −10.9dBm IIP3 while consuming 2mW from a single 1.1V power supply. The solution includes adding gain programmability to conventional resistive feedback LNA to relax the trade-off between linearity and power consumption. The RF front end is designed using a 40nm CMOS technology and occupies an area of 0.2mm2.\",\"PeriodicalId\":243968,\"journal\":{\"name\":\"2020 32nd International Conference on Microelectronics (ICM)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 32nd International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM50269.2020.9331505\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 32nd International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM50269.2020.9331505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low-Power 0.4–2.3GHz NB-IoT UE Receiver with −15dBm OOB-Tolerant RF Front End
This paper presents the system and circuit level design of a NB-IoT receiver (RX) based on 3GPP Technical Specification (TS) 36.101. This design targets serving many NB-IoT operation bands, so no off-chip filter is used. This dictates large linearity specification on the RF front end to avoid desensitization by −15dBm out-of-band blockers (OOBs). Large linearity specification leads to large power consumption. A solution is proposed to reduce power consumption of the RF front end, while achieving high gain and high linearity. The proposed RF front end provides 29.5dB gain and −10.9dBm IIP3 while consuming 2mW from a single 1.1V power supply. The solution includes adding gain programmability to conventional resistive feedback LNA to relax the trade-off between linearity and power consumption. The RF front end is designed using a 40nm CMOS technology and occupies an area of 0.2mm2.