主题演讲1:GaN是改变游戏规则的设备吗?

F. Lee
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引用次数: 11

摘要

氮化镓器件正蓄势待发,最近市场上推出了许多应用,如负载点转换器(POL)、离线开关电源、电池充电器和电机驱动器。GaN器件具有更低的栅极电荷和更低的输出电容,因此能够以10倍于硅MOSFET的开关频率工作。这可能会显著影响功率密度、外形因素,甚至当前的设计和制造实践。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Keynote 1: Is GaN a Game Changing Device ?
Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.
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