基于薄介质hmds - n膜的150 ~ 450 GHz三倍频电路的实现

IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI:10.1109/MWSYM.2003.1212481

K. Duwe, J. Muller

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引用次数: 2

摘要

介绍了一种基于HMDS-N薄膜的150 ~ 450 GHz三倍频电路的实现。该设计需要将基于gaas的异质结构势垒变容管集成在基于薄介质膜的被动馈电结构上，通过热压键合实现。第一次测量显示有足够的输出功率和效率。

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Realization of a 150 GHz to 450 GHz tripler circuit based on a thin dielectric HMDS-N-membrane

The realization of a 150 GHz to 450 GHz tripler circuit based on a thin dielectric HMDS-N membrane is described. The design requires an integration of a GaAs-based heterostructure barrier varactor on a passive feeding structure based on a thin dielectric membrane, which is realized by thermocompression bonding. First measurements show sufficient output power and efficiencies.

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IEEE MTT-S International Microwave Symposium Digest, 2003

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