{"title":"USB2多路复用器/BC1.2电源开关/充电模块的电气特性,用于精确的通道仿真","authors":"Tan Wei Jern, Tiang Bih Qui","doi":"10.1109/ICED.2014.7015780","DOIUrl":null,"url":null,"abstract":"This paper presents a new methodology of modeling multiplexers (MUXs), power switches and charging modules used in the USB2 interfaces. The proposed method yields a quick and accurate representation in both the time and frequency domains which closely matches the results obtained in both simulation and post-silicon measurement. This will be proven in 2 characterization methods; a time-domain channel response and a frequency domain s-parameter response. The proposed method also produces accurate correlation results across varying topologies, process corners and voltage levels. Subsequently, the method seeks to allow the flexibility of modeling these discrete devices to be used in a Design-of-Experiment (DOE) environment. Ultimately, this translates into a time saving benefit as shorter design cycle times are enabled due to the increased correlation and confidence between pre-silicon simulation and post-silicon validation data.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical characterization of USB2 multiplexers/BC1.2 power switches/charging modules for accurate channel simulation\",\"authors\":\"Tan Wei Jern, Tiang Bih Qui\",\"doi\":\"10.1109/ICED.2014.7015780\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new methodology of modeling multiplexers (MUXs), power switches and charging modules used in the USB2 interfaces. The proposed method yields a quick and accurate representation in both the time and frequency domains which closely matches the results obtained in both simulation and post-silicon measurement. This will be proven in 2 characterization methods; a time-domain channel response and a frequency domain s-parameter response. The proposed method also produces accurate correlation results across varying topologies, process corners and voltage levels. Subsequently, the method seeks to allow the flexibility of modeling these discrete devices to be used in a Design-of-Experiment (DOE) environment. Ultimately, this translates into a time saving benefit as shorter design cycle times are enabled due to the increased correlation and confidence between pre-silicon simulation and post-silicon validation data.\",\"PeriodicalId\":143806,\"journal\":{\"name\":\"2014 2nd International Conference on Electronic Design (ICED)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Electronic Design (ICED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICED.2014.7015780\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characterization of USB2 multiplexers/BC1.2 power switches/charging modules for accurate channel simulation
This paper presents a new methodology of modeling multiplexers (MUXs), power switches and charging modules used in the USB2 interfaces. The proposed method yields a quick and accurate representation in both the time and frequency domains which closely matches the results obtained in both simulation and post-silicon measurement. This will be proven in 2 characterization methods; a time-domain channel response and a frequency domain s-parameter response. The proposed method also produces accurate correlation results across varying topologies, process corners and voltage levels. Subsequently, the method seeks to allow the flexibility of modeling these discrete devices to be used in a Design-of-Experiment (DOE) environment. Ultimately, this translates into a time saving benefit as shorter design cycle times are enabled due to the increased correlation and confidence between pre-silicon simulation and post-silicon validation data.