Investigation of surface potential for double gate hetero junction tunnel FinFET: Application to high-& material HfO2

Tunnel FETs (TFETs) shown to be the promising devices for low standby power applications but suffers from low ON and high threshold voltage. The hetero junction tunnel FinFET has been studied here to overcome these limitations. In this work, surface potential has been modeled for double gate hetero junction tunnel FinFET to optimize the performance. Surface potential derived by applying the solution of 2-D Poisson equation and it is developed using superposition technique. The high-& dielectric material HfO2 on the surface potential model is also addressed. The analytical predictions are compared with the results obtained by the 2-D numerical techniques and Technology Computer Aided Design (TCAD) simulator (Synopsys TCAD), the obtained results are almost similar.