存储卡地址总线设计

D.A. Gernhart, C. Chang, Kesse Ho
{"title":"存储卡地址总线设计","authors":"D.A. Gernhart, C. Chang, Kesse Ho","doi":"10.1109/STIER.1990.324643","DOIUrl":null,"url":null,"abstract":"The interaction of signal line impedance, crosstalk, chip capacitive loading and driver circuit output impedance on the operation of a memory address bus is demonstrated. The ASTAP circuit simulation program is used for detailed studies. The results of three parallel address lines connected to memory chips for unterminated far ends are discussed. Signal-line impedance decreases when adjacent lines are introduced. Choosing the correct driver circuit output impedance and terminating resistance affects the signal-line voltage and switching. The memory chips add capacitive loading to the line, which also reduces the impedance and affects the delay of the line. Simultaneous switching of the address lines adds delay to the system as well. Some design parameters based upon these interactions are discussed.<<ETX>>","PeriodicalId":166693,"journal":{"name":"IEEE Technical Conference on Southern Tier","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Memory card address bus design\",\"authors\":\"D.A. Gernhart, C. Chang, Kesse Ho\",\"doi\":\"10.1109/STIER.1990.324643\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The interaction of signal line impedance, crosstalk, chip capacitive loading and driver circuit output impedance on the operation of a memory address bus is demonstrated. The ASTAP circuit simulation program is used for detailed studies. The results of three parallel address lines connected to memory chips for unterminated far ends are discussed. Signal-line impedance decreases when adjacent lines are introduced. Choosing the correct driver circuit output impedance and terminating resistance affects the signal-line voltage and switching. The memory chips add capacitive loading to the line, which also reduces the impedance and affects the delay of the line. Simultaneous switching of the address lines adds delay to the system as well. Some design parameters based upon these interactions are discussed.<<ETX>>\",\"PeriodicalId\":166693,\"journal\":{\"name\":\"IEEE Technical Conference on Southern Tier\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Technical Conference on Southern Tier\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STIER.1990.324643\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Technical Conference on Southern Tier","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STIER.1990.324643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

讨论了信号线阻抗、串扰、芯片电容负载和驱动电路输出阻抗对存储器地址总线工作的影响。采用ASTAP电路仿真程序进行详细研究。讨论了连接到存储芯片的三个并行地址线的结果,用于未终止的远端。当引入相邻线时,信号线阻抗减小。选择正确的驱动电路输出阻抗和终端电阻影响信号线电压和开关。存储芯片为线路增加了容性负载,这也降低了阻抗,影响了线路的延迟。地址线的同时交换也增加了系统的延迟。讨论了基于这些相互作用的一些设计参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memory card address bus design
The interaction of signal line impedance, crosstalk, chip capacitive loading and driver circuit output impedance on the operation of a memory address bus is demonstrated. The ASTAP circuit simulation program is used for detailed studies. The results of three parallel address lines connected to memory chips for unterminated far ends are discussed. Signal-line impedance decreases when adjacent lines are introduced. Choosing the correct driver circuit output impedance and terminating resistance affects the signal-line voltage and switching. The memory chips add capacitive loading to the line, which also reduces the impedance and affects the delay of the line. Simultaneous switching of the address lines adds delay to the system as well. Some design parameters based upon these interactions are discussed.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信