应用驱动的器件/电路联合仿真框架，用于功率MOSFET设计和技术开发

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393659

T. Sarkar, A. Challa, Kirk Huang, P. Venkatraman, D. Probst

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引用次数: 0

摘要

基于物理的器件电路联合仿真是指导和优化高性能功率mosfet工艺技术开发和器件设计的极有价值的工具。它特别适合将分立功率器件和模拟ic集成在同一封装中的新兴趋势的需要。在本文中，我们概述了这种集成设计框架的主要特性和优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Application-driven device/circuit co-simulation framework for power MOSFET design and technology development

Physics-based device-circuit co-simulation turns out to be an extremely valuable tool to guide and optimize process technology development and device design for high-performance power MOSFETs. It is particularly well-suited to the need of emerging trend of integration of discrete power devices and analog ICs in the same package. In this article, we outline the key features and benefits of such an integrated design framework.

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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