D. Meharry, R. Lender, K. Chu, L. Gunter, K. Beech
{"title":"GaN和GaAs中的多瓦宽带mmic","authors":"D. Meharry, R. Lender, K. Chu, L. Gunter, K. Beech","doi":"10.1109/MWSYM.2007.379980","DOIUrl":null,"url":null,"abstract":"A comparison is presented of 4 to 18 GHz MMIC power amplifiers implemented in AlGaN-GaN HEMT and GaAs PHEMT with common circuit design technology. Both GaN and GaAs MMICs were designed as non-uniform distributed power amplifiers and achieved approximately 4 Watts over the band. The circuit complexity of the GaAs circuit is much greater than for GaN, as shown by the relative transistor output peripheries of 14.4 mm and 2 mm. The authors believe that both the GaN and GaAs MMICs have higher power than any published result of comparable bandwidth.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"218 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":"{\"title\":\"Multi-Watt Wideband MMICs in GaN and GaAs\",\"authors\":\"D. Meharry, R. Lender, K. Chu, L. Gunter, K. Beech\",\"doi\":\"10.1109/MWSYM.2007.379980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comparison is presented of 4 to 18 GHz MMIC power amplifiers implemented in AlGaN-GaN HEMT and GaAs PHEMT with common circuit design technology. Both GaN and GaAs MMICs were designed as non-uniform distributed power amplifiers and achieved approximately 4 Watts over the band. The circuit complexity of the GaAs circuit is much greater than for GaN, as shown by the relative transistor output peripheries of 14.4 mm and 2 mm. The authors believe that both the GaN and GaAs MMICs have higher power than any published result of comparable bandwidth.\",\"PeriodicalId\":213749,\"journal\":{\"name\":\"2007 IEEE/MTT-S International Microwave Symposium\",\"volume\":\"218 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"60\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE/MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2007.379980\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE/MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2007.379980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparison is presented of 4 to 18 GHz MMIC power amplifiers implemented in AlGaN-GaN HEMT and GaAs PHEMT with common circuit design technology. Both GaN and GaAs MMICs were designed as non-uniform distributed power amplifiers and achieved approximately 4 Watts over the band. The circuit complexity of the GaAs circuit is much greater than for GaN, as shown by the relative transistor output peripheries of 14.4 mm and 2 mm. The authors believe that both the GaN and GaAs MMICs have higher power than any published result of comparable bandwidth.
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