GaAs半导体中空间电荷波的非线性相互作用

V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya
{"title":"GaAs半导体中空间电荷波的非线性相互作用","authors":"V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya","doi":"10.1109/MIEL.2002.1003203","DOIUrl":null,"url":null,"abstract":"This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-linear interaction of space charge waves in GaAs semiconductor\",\"authors\":\"V. Grimalsky, J. Escobedo-Alatorre, M. Tecpoyotl-Torres, S. Koshevaya\",\"doi\":\"10.1109/MIEL.2002.1003203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文研究了砷化镓半导体中空间电荷波(相速度等于电子漂移速度)的非线性效应。如果外加电场,在临界场值E/sub crit/处,迁移率改变符号变为负值,从而得到E/spl ges/E/sub crit/处相互作用的非线性和线性不稳定性。在这些条件下,电子速度是E=E/sub 0/+E/spl tilde/给出的电场的函数,其中E/sub 0/为常数部分,E/spl tilde/为变量部分。考虑麦克斯韦方程组和速度函数,对砷化镓半导体中空间电荷波的非线性相互作用进行了模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Non-linear interaction of space charge waves in GaAs semiconductor
This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value E/sub crit/, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E/spl ges/E/sub crit/. Under these conditions, the electron velocity is a function of the electric field given by E=E/sub 0/+E/spl tilde/, where E/sub o/ is the constant part and E/spl tilde/ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell's equations and the velocity function.
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