基于椭圆偏振光谱技术测量DRAM金属-0沟槽四种剖面参数的可行性

2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846) Pub Date : 2004-09-09 DOI:10.1109/SMTW.2004.1393754

R. Liou, T. Cheng, Chung-I Chang, Tings Wang, S. Fu, T. Dziura

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引用次数: 3

摘要

本文研究了用一种方法测量DRAM金属-0沟槽的总刻蚀深度、临界尺寸、剩余聚硬掩膜厚度和侧壁角四个轮廓参数的可行性。宽频带椭偏光谱可提供无损轮廓信息。结果证明了它能够通过一次测量提供所需的轮廓信息，传统上是在4种不同的计量工具上测量的。这种能力可以大大简化金属-0沟槽的工艺流程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Feasibility of measuring four profile parameters for metal-0 trench of DRAM by spectroscopic ellipsometry based profile technology

The feasibility of measuring four profile parameters, i.e,, total etch depth, critical dimension (CD), thickness of remaining poly hard mask, and sidewall angle, for the metal-0 trench of DRAM by a single technique was investigated in this study. Broadband spectroscopic ellipsometry was used to provide non-destructive profile information. The results prove its capability for providing the required profile information, traditionally measured on 4 different metrology tools, by a single measurement. This capability could significantly simplify the process flow for metal-0 trench.

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2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)

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