55-µA geexte1−x/Sb2Te3超晶格拓扑开关随机存取存储器(TRAM)及其在Ge-Te和Sb-Te结构中的原子排列研究

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI:10.1109/IEDM.2014.7047132

N. Takaura, T. Ohyanagi, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, H. Shirakawa, M. Araidai, K. Shiraishi, Y. Saito, J. Tominaga

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引用次数: 19

摘要

研制了geexte1 -x/Sb2Te3超晶格拓扑开关随机存取存储器(TRAM)。设置和复位电流为55 μA，为ulsi级器件的最低电流。对Ge-Te结构和新型超晶格制造的TEM分析使我们首次揭示了TRAM的保留性、耐久性和电特性。

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55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

Ge_xTe_1-x/Sb₂Te₃ superlattice topological-switching random access memory (TRAM) was developed. Set and reset currents of 55 μA, the lowest for an ULSI-grade device, were obtained. TEM analyses of the Ge-Te structures and novel superlattice fabrication enabled us to reveal the retention, endurance, and electrical characteristics of TRAM for the first time.

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2014 IEEE International Electron Devices Meeting

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