基于晶圆级扇出工艺的多芯片嵌入式中介载波特性分析

C. Lee, Wen-Hung Liu, Shu-Yi Chang, Ren-Shin Cheng, Yu-Min Lin, Hsiang-En Ding, W. Chiu, T. Chang, Chia-Hsin Lee, Chang-Chun Lee
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引用次数: 0

摘要

本文对EIC(Embedded Interposer Carrier)结构进行了结构分析和电学特性研究。对包括扇出RDL工艺在内的多芯片EIC结构进行了评估和开发。嵌入式中间体、成型工艺、临时粘接、RDL形成等关键技术得到了开发和集成,并取得了良好的性能。结果表明,EIC载波是可以集成的,并且有数据表明该芯片在电子应用中的可行性。电学分析不仅显示了不同互连长度下的频域和时域测量结果,而且还显示了模型和验证之间的相关性。在这种新的封装结构中,它与扇出封装技术兼容,并且易于组合不同的芯片,在有限的成本结构下实现接近3D IC的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristic Analysis of a Multi-chip Embedded Interposer Carrier using a Wafer-Level Fan-Out Process
In this paper, we investigated the structural analysis and electrical characteristics of EIC(Embedded Interposer Carrier) structure. The multi-chip EIC structure including a fan-out RDL process has been evaluated and developed. Key technologies including embedded interposers, molding process, temporary bonding, and RDL formation have been developed and integrated with good performance. The results indicate that the EIC carrier can be integrated, and there are data showing the feasibility of the chiplet in electronics applications. The electrical analysis will show not only frequency- and time-domain measurements under different lengths of interconnects but also the correlation between model and verification. In this new packaging structure, it is compatible with fan-out packaging technology and is easy to combine different chips to achieve performance close to 3D IC under a limited cost structure.
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