SiGe集成毫米波推推式压控振荡器,降低功耗

R. Wanner, R. Lachner, G. Olbrich
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引用次数: 13

摘要

为了在汽车雷达应用中使用,我们设计并制造了几个频率范围为67至75 GHz的推推式vco。在本文中,我们提出了一种可以从71.3 GHz调谐到75.8 GHz的振荡器。在此调谐范围内,测量输出功率为3.5 ~ 0.4 dBm,直流到射频效率eta = 1.6%。在1MHz偏置频率下,测量到的单边带相位噪声低于- 105dBc/Hz。在降低电源电压的情况下,当射频输出功率为1.5 dBm时,效率可提高到eta = 3.5%。该电路是在接近SiGe:C的生产双极技术中制造的。SiGe:C双极晶体管的最大传输频率fT = 200 GHz,最大振荡频率max = 275 GHz。无源电路的传输线元件采用了mim电容和集成电阻
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiGe integrated mm-wave push-push VCOs with reduced power consumption
For use in automotive radar applications we have designed and fabricated several push-push VCOs within the frequency range 67 to 75 GHz. In this paper we present one of these oscillators which can be tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 it 0.4 dBm with an DC to RF efficiency eta = 1.6%. The measured single sideband phase noise is below - 105dBc/Hz at 1MHz offset frequency. With a reduced supply voltage the efficiency can be increased to eta = 3.5 % with an RF output power of 1.5 dBm. The circuits are fabricated in a production-near SiGe:C bipolar technology. The SiGe:C bipolar transistors show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation max = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used
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