Q.B. Zou, Z. Tan, Z.F. Wang, M. K. Lim, R. Lin, S. Yi, Z.J. Li
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Preamplifier has been on-chip integrated in a JFET type by use of ion implantation. \"Electret\" charges are bonded in a deep potential trap, different from that of traditional electret of which the charges are in a surface shallow potential trap, thus this microphone can operate at high temperature (high as 300/spl deg/C) and has high stability and reliability. Experiments show that the prototype microphone has a 3 mV/Pa sensitivity and 2l kHz frequency bandwidth in a 1 mm /spl times/1 mm diaphragm area. Microphone performance can be further improved by use of the optimized processes and designs. The fabrication is completely IC-compatible, hence the microphone is promising in the integrated acoustic systems.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. 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引用次数: 0
摘要
本研究提出了一种新型的“驻极体”传声器,并采用单片制造技术实现。麦克风使用一个被高度绝缘材料包围的带电浮动电极作为“驻极体”来激发电场。漂浮电极中的净自由电荷(不是传统驻极体中的“键合”电荷)可以通过使用“热”电子技术轻松充电,这种技术可以使用所谓的p/sup +/-n结的雪崩击穿技术。因此,驻极体麦克风是可充电的,这可以大大增加麦克风的使用寿命。利用离子注入将前置放大器集成到JFET型片上。“驻极体”电荷在深电位阱中键合,不同于传统驻极体电荷在表面浅电位阱中键合,因此该传声器可在高温(高达300/spl℃)下工作,具有较高的稳定性和可靠性。实验表明,该原型麦克风在1 mm /1倍/1 mm的膜片面积内具有3 mV/Pa的灵敏度和2l kHz的带宽。通过优化的工艺和设计,可以进一步提高麦克风的性能。该工艺完全兼容集成电路,因此在集成声学系统中具有广阔的应用前景。
Design and fabrication of a novel integrated floating-electrode-"electret"-microphone (FFEM)
In this study, a novel principle "electret" microphone is proposed and implemented by a single-chip fabrication technique. The microphone uses a charged floating electrode surrounded by highly insulated materials as "electret" to excite electric field. Net free-electric-charges (not "bonded" charges as in traditional electret) in the floating electrode can be easily charged by use of the "hot" electron technique, available using the so-called avalanche-breakdown technique of p/sup +/-n junction. Thus the electret microphone is rechargeable, which can greatly increase the lifetime of the microphone. Preamplifier has been on-chip integrated in a JFET type by use of ion implantation. "Electret" charges are bonded in a deep potential trap, different from that of traditional electret of which the charges are in a surface shallow potential trap, thus this microphone can operate at high temperature (high as 300/spl deg/C) and has high stability and reliability. Experiments show that the prototype microphone has a 3 mV/Pa sensitivity and 2l kHz frequency bandwidth in a 1 mm /spl times/1 mm diaphragm area. Microphone performance can be further improved by use of the optimized processes and designs. The fabrication is completely IC-compatible, hence the microphone is promising in the integrated acoustic systems.