一种基于黑硅原子层沉积的新型超级电容器设计

Li Zhang, D. Zhao, Jun He, Xian Huang, Fang Yang, Dacheng Zhang
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引用次数: 0

摘要

本文介绍了一种基于黑硅的新型超级电容器的设计。设计了原子层沉积法制备介质层和电极层。我们选择黑硅作为衬底。设计了一种特殊的MEMS工艺来实现金属电极与电极层之间的接触。电容计算采用平行板电容理论。仿真结果表明,这种新型超级电容器具有电容大、充放电速度快的特点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel design of super-capcitor based on black silicon with atomic layer deposition
In this paper, a novel super-capacitor design based on the black silicon was introduced. The atomic layer deposition was designed to fabricate the dielectric and electrode layer. And the black silicon was chosen for the substrate. A specific MEMS process was also designed to achieve the contact between the metal electrode and electrode layer. The parallel-plate capacitor theory was employed for the capacitance calculation. And the simulation has showed that this novel super-capacitor design has big capacitance and quick charge/discharge speed.
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