The radiation-hardened differential difference operational amplifiers for operation in the low-temperature analog interfaces of sensors

The article considers a new architecture of the BiJFet differential difference operational amplifier (DDA) on the base of single-ended differential stages, providing small values of systematic component of the offset voltage (Vos) in conditions of radiation and low-temperature degradation of current gains of the bipolar transistor base (β). The main equations are obtained, which allow formulating the requirements to the functional nodes of DDA - current mirrors and an output buffer amplifier, at which the effect cancellation P of the applied transistors is provided. The results of the computer simulation of BiJFet-DDA in the range of temperature -140° ÷ +100° and neutron flux up to 5.1013 n/cm2 are given. They show that its magnitude Vos is not bigger than unities of /V.