Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs

The analysis of hot-carrier induced degradation of SOI/MOSFETs is a complicated problem due to the dual channel and front-back coupling effect. Opinions vary as to whether hot-carrier stress of the front (or back) channel results in damage of the opposite channel. Most of the previous studies have used channel current or transconductance as the monitor of hot-carrier induced degradation in SOI/MOSFETs, which often does not allow clear separation between interface-trap generation and charge trapping at both interfaces. In this paper, by systematically examining the charge-pumping currents, junction recombination currents, static I/sub d/-V/sub g/ characteristics, and transconductance curves, we will demonstrate that the opposite channel is indeed damaged during channel hot-carrier (HC) stress, and this damage can be separated from the front-back coupling effect.