E. Buitrago, M. Fernandez-Bolaños, Y. Georgiev, Yu-tong Ran, O. Lotty, J. Holmes, A. Nightingale, A. Ionescu
{"title":"原子摩尔链亲和素和pH,基于3D垂直堆叠SiNW fet的低功耗传感器","authors":"E. Buitrago, M. Fernandez-Bolaños, Y. Georgiev, Yu-tong Ran, O. Lotty, J. Holmes, A. Nightingale, A. Ionescu","doi":"10.1109/VLSI-TSA.2014.6839691","DOIUrl":null,"url":null,"abstract":"3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔId/pH) of ~0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ~ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Attomolar streptavidin and pH, low power sensor based on 3D vertically stacked SiNW FETs\",\"authors\":\"E. Buitrago, M. Fernandez-Bolaños, Y. Georgiev, Yu-tong Ran, O. Lotty, J. Holmes, A. Nightingale, A. Ionescu\",\"doi\":\"10.1109/VLSI-TSA.2014.6839691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔId/pH) of ~0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ~ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.\",\"PeriodicalId\":403085,\"journal\":{\"name\":\"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2014.6839691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2014.6839691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Attomolar streptavidin and pH, low power sensor based on 3D vertically stacked SiNW FETs
3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔId/pH) of ~0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ~ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.