原子摩尔链亲和素和pH,基于3D垂直堆叠SiNW fet的低功耗传感器

E. Buitrago, M. Fernandez-Bolaños, Y. Georgiev, Yu-tong Ran, O. Lotty, J. Holmes, A. Nightingale, A. Ionescu
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引用次数: 6

摘要

采用自顶向下CMOS兼容工艺,在绝缘体上硅(SOI)上制备了三维垂直堆叠硅纳米线(SiNW)场效应晶体管(FET),该晶体管具有满耗尽和超薄(15-30 nm)悬浮通道的高密度阵列(高达7×20)。通道可以被保形高κ栅极电介质(HfO2)包裹,它们的电导率可以通过参考电极或三个局部栅极很好地控制;一个后门(BG)和两个对称的Pt侧门(SG)提供独特的灵敏度调谐。这种三维结构已被(3-氨基丙基)-三乙氧基硅烷(APTES)功能化和生物基化,分别用于pH和链亲和素(蛋白质)传感。超低浓度17 aM链霉亲和素测定,为文献报道的最低浓度。在亚阈值状态下,具有APTES功能化SiO2栅极电介质的结构测量到极高的准指数漏极电流响应(ΔId/pH) ~0.70 dec/pH。此外,在强倒转状态下,采用天然氧化栅介质的结构具有高漏极电流响应(> 20 μA/pH)和高灵敏度(S ~ 95%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Attomolar streptavidin and pH, low power sensor based on 3D vertically stacked SiNW FETs
3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔId/pH) of ~0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ~ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.
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