它是

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664) Pub Date : 2003-06-08 DOI:10.1109/SENSOR.2003.1215247

Hang Guo, A. Lal

{"title":"它是","authors":"Hang Guo, A. Lal","doi":"10.1109/SENSOR.2003.1215247","DOIUrl":null,"url":null,"abstract":"This paper presents theoretical and experimental studies on betavoltaic microbatteries using low-level radiation from 1/spl sim/100 milliCurie /sup 63/Ni thin films. The model indicates that powers of hundred nanowatts are possible with 50-100 milliCurie radioisotope sources. Two types of betavoltaic microbatteries are developed and tested. One is the planar silicon pn-diode with electroplating of /sup 63/Ni thin film, and the other is the bulk micromachined pn-junction structure with the inverted pyramid array. The obtained power is on the scale of one-nanowatt with an open circuit voltage of 128 millivolts, and a short circuit current of 2.86 nA. The output power can be increased using greater activity and efficient collector designs.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"78","resultStr":"{\"title\":\"Nanopower betavoltaic microbatteries\",\"authors\":\"Hang Guo, A. Lal\",\"doi\":\"10.1109/SENSOR.2003.1215247\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents theoretical and experimental studies on betavoltaic microbatteries using low-level radiation from 1/spl sim/100 milliCurie /sup 63/Ni thin films. The model indicates that powers of hundred nanowatts are possible with 50-100 milliCurie radioisotope sources. Two types of betavoltaic microbatteries are developed and tested. One is the planar silicon pn-diode with electroplating of /sup 63/Ni thin film, and the other is the bulk micromachined pn-junction structure with the inverted pyramid array. The obtained power is on the scale of one-nanowatt with an open circuit voltage of 128 millivolts, and a short circuit current of 2.86 nA. The output power can be increased using greater activity and efficient collector designs.\",\"PeriodicalId\":196104,\"journal\":{\"name\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"78\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2003.1215247\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2003.1215247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 78

摘要

本文介绍了利用1/spl sim/100毫居里/sup 63/Ni薄膜的低水平辐射制备倍他伏打微电池的理论和实验研究。该模型表明，使用50-100毫居里的放射性同位素源可以产生100纳瓦的功率。开发并测试了两种类型的倍他伏打微电池。一种是电镀/sup 63/Ni薄膜的平面硅pn二极管，另一种是采用倒金字塔阵列的体微加工pn结结构。在开路电压128毫伏，短路电流2.86 nA的条件下，得到了一纳瓦的功率。输出功率可以增加使用更大的活性和有效的集电极设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanopower betavoltaic microbatteries

This paper presents theoretical and experimental studies on betavoltaic microbatteries using low-level radiation from 1/spl sim/100 milliCurie /sup 63/Ni thin films. The model indicates that powers of hundred nanowatts are possible with 50-100 milliCurie radioisotope sources. Two types of betavoltaic microbatteries are developed and tested. One is the planar silicon pn-diode with electroplating of /sup 63/Ni thin film, and the other is the bulk micromachined pn-junction structure with the inverted pyramid array. The obtained power is on the scale of one-nanowatt with an open circuit voltage of 128 millivolts, and a short circuit current of 2.86 nA. The output power can be increased using greater activity and efficient collector designs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)

自引率

0.00%

发文量