基于自动预表征和机器学习的布局电容提取

Zhixing Li, Weiping Shi
{"title":"基于自动预表征和机器学习的布局电容提取","authors":"Zhixing Li, Weiping Shi","doi":"10.1109/ISQED48828.2020.9136970","DOIUrl":null,"url":null,"abstract":"The most widely adopted approach for layout capacitance extraction is pattern matching, where a layout is partitioned into small sections and matched against a pre-characterized pattern library. The capacitance formula associated with the matched pattern is used to compute the capacitance. The pattern matching approach can meet the speed and capacity requirements for large ASICs, but the pattern library and associated formula must be manually created by experienced engineers through a tedious process. For each new process node or any change to the technology profile, this process has to be repeated, causing a heavy burden on the EDA vendors and delays in PDK releases by the foundries. In this paper, we propose an automatic approach that significantly reduces the effort and time compared with the manual approach for the pattern matching method for capacitance extraction. Our approach consists of the following steps: 1) generate sample geometries that cover the problem space, 2) for each sample geometry, call a field solver to compute the capacitance value, 3) use unsupervised learning with the field solver values and foundry values as guidance to cluster geometries into patterns and derive the capacitance formula, and 4) use supervised learning to train a neural network that will be used to classify any layout geometry into a pattern in the library, which will be used at the extraction time. Experiment results show the proposed approach achieves satisfactory accuracy well above the foundry requirements and runs as fast as traditional pattern matching software. Although our approach is only demonstrated for 2D, it is the first framework using the automatic procedure and machine learning in capacitance extraction. As the interconnect structures and foundry requirements become more complex, our approach may be attractive to EDA vendors and foundries.","PeriodicalId":225828,"journal":{"name":"2020 21st International Symposium on Quality Electronic Design (ISQED)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Layout Capacitance Extraction Using Automatic Pre-Characterization and Machine Learning\",\"authors\":\"Zhixing Li, Weiping Shi\",\"doi\":\"10.1109/ISQED48828.2020.9136970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The most widely adopted approach for layout capacitance extraction is pattern matching, where a layout is partitioned into small sections and matched against a pre-characterized pattern library. The capacitance formula associated with the matched pattern is used to compute the capacitance. The pattern matching approach can meet the speed and capacity requirements for large ASICs, but the pattern library and associated formula must be manually created by experienced engineers through a tedious process. For each new process node or any change to the technology profile, this process has to be repeated, causing a heavy burden on the EDA vendors and delays in PDK releases by the foundries. In this paper, we propose an automatic approach that significantly reduces the effort and time compared with the manual approach for the pattern matching method for capacitance extraction. Our approach consists of the following steps: 1) generate sample geometries that cover the problem space, 2) for each sample geometry, call a field solver to compute the capacitance value, 3) use unsupervised learning with the field solver values and foundry values as guidance to cluster geometries into patterns and derive the capacitance formula, and 4) use supervised learning to train a neural network that will be used to classify any layout geometry into a pattern in the library, which will be used at the extraction time. Experiment results show the proposed approach achieves satisfactory accuracy well above the foundry requirements and runs as fast as traditional pattern matching software. Although our approach is only demonstrated for 2D, it is the first framework using the automatic procedure and machine learning in capacitance extraction. As the interconnect structures and foundry requirements become more complex, our approach may be attractive to EDA vendors and foundries.\",\"PeriodicalId\":225828,\"journal\":{\"name\":\"2020 21st International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED48828.2020.9136970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED48828.2020.9136970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

最广泛采用的布局电容提取方法是模式匹配,其中将布局划分为小部分并与预表征的模式库进行匹配。利用与匹配图形相关联的电容公式计算电容。模式匹配方法可以满足大型asic的速度和容量要求,但模式库和相关公式必须由经验丰富的工程师通过繁琐的过程手动创建。对于每个新的工艺节点或对技术概要文件的任何更改,都必须重复此过程,这给EDA供应商带来了沉重的负担,并导致代工厂延迟发布PDK。在本文中,我们提出了一种自动方法,与手动方法相比,它大大减少了模式匹配方法在电容提取中的工作量和时间。我们的方法包括以下步骤:1)生成覆盖问题空间的样本几何形状,2)对于每个样本几何形状,调用场求解器计算电容值,3)使用无监督学习与场求解器值和铸造值作为指导,将几何形状聚类成模式并推导电容公式,4)使用监督学习训练神经网络,该神经网络将用于将库中的任何布局几何形状分类为模式,这将在提取时使用。实验结果表明,该方法达到了令人满意的精度,远高于铸造要求,运行速度与传统的模式匹配软件相当。虽然我们的方法仅用于2D,但它是第一个在电容提取中使用自动过程和机器学习的框架。随着互连结构和代工要求变得越来越复杂,我们的方法可能对EDA供应商和代工具有吸引力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Layout Capacitance Extraction Using Automatic Pre-Characterization and Machine Learning
The most widely adopted approach for layout capacitance extraction is pattern matching, where a layout is partitioned into small sections and matched against a pre-characterized pattern library. The capacitance formula associated with the matched pattern is used to compute the capacitance. The pattern matching approach can meet the speed and capacity requirements for large ASICs, but the pattern library and associated formula must be manually created by experienced engineers through a tedious process. For each new process node or any change to the technology profile, this process has to be repeated, causing a heavy burden on the EDA vendors and delays in PDK releases by the foundries. In this paper, we propose an automatic approach that significantly reduces the effort and time compared with the manual approach for the pattern matching method for capacitance extraction. Our approach consists of the following steps: 1) generate sample geometries that cover the problem space, 2) for each sample geometry, call a field solver to compute the capacitance value, 3) use unsupervised learning with the field solver values and foundry values as guidance to cluster geometries into patterns and derive the capacitance formula, and 4) use supervised learning to train a neural network that will be used to classify any layout geometry into a pattern in the library, which will be used at the extraction time. Experiment results show the proposed approach achieves satisfactory accuracy well above the foundry requirements and runs as fast as traditional pattern matching software. Although our approach is only demonstrated for 2D, it is the first framework using the automatic procedure and machine learning in capacitance extraction. As the interconnect structures and foundry requirements become more complex, our approach may be attractive to EDA vendors and foundries.
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