不同介电材料对p++硅隔膜的影响

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982022

Junmiao Wu, Deshu Zou, G. Gao, Lan Li, N. Niu, G. Shen

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引用次数: 0

摘要

分析了不同介质材料对p++硅薄膜热应力的影响。本文描述了基于有限元分析(FEA)的薄膜沉积模型。理论结果预测了在p++硅薄膜上沉积不同介电材料时力学性能的变化。

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Influences of various dielectrics materials on p++ silicon diaphragm

Effects of various dielectric materials on thermal stress in p++ silicon diaphragm were analyzed. In this work the modeling of thin film deposition based on the finite element analysis (FEA) is described. The theoretical results predict the change of mechanical performance when various dielectric materials were deposited on p++ silicon diaphragm.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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