Qinfei Ni, Zhongyang Qiu, Bin Yu, X. Liu, T. Zhang, Yuxia Wang
{"title":"2°GaAs衬底上生长GaP外延层的工艺优化","authors":"Qinfei Ni, Zhongyang Qiu, Bin Yu, X. Liu, T. Zhang, Yuxia Wang","doi":"10.1109/ICOOM.2012.6316201","DOIUrl":null,"url":null,"abstract":"GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"34 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate\",\"authors\":\"Qinfei Ni, Zhongyang Qiu, Bin Yu, X. Liu, T. Zhang, Yuxia Wang\",\"doi\":\"10.1109/ICOOM.2012.6316201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"34 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate
GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
