横向双扩散场环在超高压器件MOS晶体管设计中的应用

IEEE 2011 10th International Conference on Electronic Measurement & Instruments Pub Date : 2011-10-10 DOI:10.1109/ICEMI.2011.6037685

Yang Shaoming, G. Sheu, Guo Jiaming, Tasi Jung Ruey

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引用次数: 1

摘要

在结隔离功率集成电路技术中，研制了一种具有多侧双扩散场环的超低电压器件，并对其进行了成功的仿真。P+植入体的多环采用线性P -top掩模设计，形成多侧向扩散场环，造成多个耗尽区。由于电荷平衡效应，多个p顶环使得n漂移区的掺杂浓度增加，导致比导通电阻降低。所提出的多p顶环RESURF LDMOS器件能够实现低于144.7 mΩcm2的特定导通电阻，同时保持超过800伏的击穿电压。

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Application of multi-lateral double diffused field ring in ultrahigh-voltage device MOS transistor design

A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask design to form multi-lateral diffused field ring to cause many depletion regions. Due to charge balance effect, the multiple p-top rings makes the doping concentration of the N-drift region increased to cause the specific on-resistance reduced. The proposed multiple p-top rings RESURF LDMOS device is able to achieve a specific on-resistance of lower than 144.7 mΩcm2 while maintaining a breakdown voltage of over 800 volts.

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IEEE 2011 10th International Conference on Electronic Measurement & Instruments

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