用于开关和射频功率放大的新型低电容VDMOS器件

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487982

S. Sapp, P. Thorup, A. Challa

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引用次数: 7

摘要

本文介绍了一种新型的低电压PLANAR栅极VDMOS器件及其工艺。该器件架构旨在降低输出电容，同时保持低导通状态电阻，用于功率开关应用和射频功率放大。80V器件采用电荷平衡技术来最小化导通电阻，并考虑如何减小输出电容以降低开关损耗。

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Novel low capacitance VDMOS device for switching and RF power amplification

In this paper the development of a novel low voltage PLANAR gate VDMOS device and process is presented. The device architecture was developed to reduce output capacitance while maintaining low on-state resistance for use in power switching applications and RF power amplification. The 80V device employs charge-balance techniques to minimize on-resistance and also considers how to reduce output capacitance to reduce switching loss.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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