二维集成电路过程建模程序- RECIPE

G. E. Smith, A. Steckl
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引用次数: 3

摘要

RECIPE是为VLSI应用开发的二维(2-D)过程建模程序。该程序结合了一个二维扩散模型,其中包括扩散系数的浓度依赖性。采用增量解的方法计算适当的扩散系数作为时间和距离的函数。RECIPE已用于模拟具有P或As源和漏极植入物的短沟道MOSFET中的杂质分布。对于典型的P和As植入条件为150 keV,1 \乘以10^{16}/cm2,在1000°C下退火30分钟,1 μ m栅极MOSFET的有效沟道长度分别为0.2和0.5 μ m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-dimensional integrated circuit process modeling program - RECIPE
RECIPE is a two-dimensional (2-D) process modeling program developed for use in VLSI applications. The program incorporates a 2-D diffusion model which includes the concentration dependence of the diffusion coefficients. An incremental solution method is used to compute the appropriate diffusion coefficients as a function of time and distance. RECIPE has been used to model impurity profiles in short-channel MOSFET's with either P or As source and drain implants. For typical P and As implant conditions of 150 keV,1 \times 10^{16}/cm2and 30 min. anneal at 1000°C, 1µm gate MOSFET's resulted in effective channel lengths of 0.2 and 0.5 µm, respectively.
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