T-RAM细胞的数据再生和干扰免疫

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948754

H. Mulaosmanovic, C. M. Compagnoni, Niccolo Castellani, Gianpietro Carnevale, D. Ventrice, P. Fantini, A. Spinelli, A. Lacaita, Augusto Benvenuti

{"title":"T-RAM细胞的数据再生和干扰免疫","authors":"H. Mulaosmanovic, C. M. Compagnoni, Niccolo Castellani, Gianpietro Carnevale, D. Ventrice, P. Fantini, A. Spinelli, A. Lacaita, Augusto Benvenuti","doi":"10.1109/ESSDERC.2014.6948754","DOIUrl":null,"url":null,"abstract":"This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"11 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Data regeneration and disturb immunity of T-RAM cells\",\"authors\":\"H. Mulaosmanovic, C. M. Compagnoni, Niccolo Castellani, Gianpietro Carnevale, D. Ventrice, P. Fantini, A. Spinelli, A. Lacaita, Augusto Benvenuti\",\"doi\":\"10.1109/ESSDERC.2014.6948754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"11 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

这项工作首次深入研究了T-RAM细胞的数据再生和干扰免疫。在十纳米器件上的实验结果表明，读取操作不会损害细胞的记忆状态，但只有在高频重复时才会对其再生有贡献。然后详细研究了读取过程中字线和位线偏置的单独作用，给出了设备中发生的物理过程的清晰图像。在这样做，电干扰的影响，对未选择的细胞来自读取操作的阵列被全面解决。

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Data regeneration and disturb immunity of T-RAM cells

This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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