1阶乘法器CNTFET实现的比较研究

Doaa K. Abdelrahman, Rawan Mohammed, M. Fouda, L. Said, A. Radwan
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引用次数: 3

摘要

三元逻辑已成为传统二进制逻辑的一个有前途的替代方案,由于低功耗和减少电路,如互连和芯片面积。使用三元逻辑系统可以提高乘法器电路的效率。碳纳米管场效应晶体管(CNTFET)由于具有低功耗、高性能等低关断电流特性,比MOSFET具有更多的优势,是一种很有前途的技术。本文对基于CNTFET技术的四种1倍频乘法器的实现进行了比较研究。比较了电源电压和温度变化对面积、功率、延迟和功率延迟乘积的影响。仿真结果表明,采用基于传输门的乘法器可以实现适当的PDP。所有的设计都是使用虚拟源CNTFET (VS-CNTFET)斯坦福模型实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative Study of CNTFET Implementations of 1-trit Multiplier
Ternary logic has become a promising alternative to traditional binary logic due to low power consumption and reduced circuits such as interconnects and chip areas. The efficiency of the multiplier circuit can be much better using a ternary logic system. Carbon nanotube field-effect transistor (CNTFET) is a promising technology as it achieves more advantages than MOSFET due to its low off-current features such as low power and high performance. This paper presents a comparative study of four implementations of a 1-trit multiplier based on CNTFET technology. The comparison is performed in terms of area, power, delay, and power delay product versus variation of supply voltage and temperature. The simulation results show that the proper PDP can be achieved using the transmission gate based multiplier. All the designs are implemented using the Virtual Source CNTFET (VS-CNTFET) Stanford model.
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