用于RDL中间体的先进低Dk和高密度光成像介电材料

Tetsuya Nemoto, Junichi Ooto, Hirokazu Ito, Koichi Hasegawa
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引用次数: 0

摘要

未来的再分配层(RDL)中间层需要低介电常数(Dk)和高密度的RDL层,以提高高性能计算(HPC)应用中的信号和功率完整性。本文提出了碱显影光成像电介质fg系列(PID),其在10GHz下的Dk低至2.9,可实现2μm-via图像化,并在2μm-L/S Cu走线上提供偏置高加速应力测试(b- HAST)电阻。fg系列是实现低信号延迟、高密度和高可靠性的RDL中介器的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Low Dk and High-Density Photo- Imageable Dielectrics for RDL Interposer
Future Redistribution Layer (RDL) interposer requires low dielectric constant (Dk) and high density RDL layers to improve signal and power integrity in high- performance computing (HPC) application. This paper proposes alkali-developable photo-imageable dielectrics (PID), FG-Series with low Dk of 2.9 at 10GHz, which enable 2μm-via patterning and provide biased high accelerated stress test (b- HAST) resistance on 2μm-L/S Cu traces. FG-series is promising candidates to enable low signal delay, high density and good reliability for RDL interposer.
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