通过离子注入和侧壁氧化自对准技术降低SiGe/Si HBT的基极电阻

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786135

Chen Xu, Jingyan Zhang, Lixin Zhao, J. Deng, Changbao Tao, G. Gao, Jinyu Du, Ji Luo, Deshu Zou, Jianxing Chen, G. Shen

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引用次数: 1

摘要

采用离子注入和侧壁氧化自对准技术降低了SiGe HBT的外源基极电阻。在适当的注入和退火参数下，SiGe层的片电阻降低了20倍以上，欧姆接触也得到了改善。这可以大大提高SiGe HBT的频率性能，降低噪声系数。SiGe片电阻对注入和退火参数都很敏感。对于我们的样品，注入剂量为10/sup 16//cm/sup 3/ /，能量为35 kev，退火温度为960/spl℃至1000/spl℃是合适的。

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The reduction of base resistance of SiGe/Si HBT via ion implantation and side-wall oxide self-aligned technique

Ion implantation and the side-wall oxide self-aligned technique was used to reduce the extrinsic base resistance of a SiGe HBT. The sheet resistance of the SiGe layer was reduced over 20 times under proper implantation and annealing parameters, and ohmic contacting was also improved. This can greatly enhance the frequency performance and reduce the noise figure of SiGe HBT. The SiGe sheet resistance is sensitive to the implantation and annealing parameters. For our samples an implantation dose of 10/sup 16//cm/sup 3/ and energy of 35 kev, annealing temperature from 960/spl deg/C to 1000/spl deg/C is suitable.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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