Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor

This paper discusses the local optical properties and the morphologies of interface and oxide layer of SiO2/SiC. The cross-section morphology of the SiO2/SiC after polishing and etching was illustrated by scanning electron microscopy, and the refractive index was characterized by ellipsometry. The ellipsometry based on multilayer interface model is better than that based on single-interface model in reflecting the gap layer and the different typical interface layers across the interface. A correlation is found between morphology and refractive index under the temperature range from 600 °C to 900 °C. The capacitance model including multilayer interface is established for sensitivity component in pressure sensor, and the maximum rate of capacitance drift is 3.56%.