用于大功率毫米波信号产生的LC压控振荡器

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659216

S. Lai, D. Kuylenstierna, R. Kozhuharov, B. Hansson, H. Zirath

{"title":"用于大功率毫米波信号产生的LC压控振荡器","authors":"S. Lai, D. Kuylenstierna, R. Kozhuharov, B. Hansson, H. Zirath","doi":"10.1109/CSICS.2013.6659216","DOIUrl":null,"url":null,"abstract":"The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors' knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"58 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"An LC VCO for High Power Millimeter-Wave Signal Generation\",\"authors\":\"S. Lai, D. Kuylenstierna, R. Kozhuharov, B. Hansson, H. Zirath\",\"doi\":\"10.1109/CSICS.2013.6659216\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors' knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"58 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659216\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659216","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

提出了一种采用0.25 μ m InP DHBT技术的G波段二次谐波压控振荡器。该压控振荡器采用交叉耦合拓扑结构，具有电容性发射极退化和二阶槽来峰值二次谐波信号。VCO的调谐范围为169-176GHz，峰值功率为-2.7dBm，在Vc=4V和Ic=46mA时偏置。据作者所知，这是第一个设计在100 GHz以上的HBT交叉耦合VCO。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An LC VCO for High Power Millimeter-Wave Signal Generation

The paper presents a G band second harmonic VCO in 0.25um InP DHBT technology. The VCO uses a cross-coupled topology with a capacitive emitter degeneration and a second order tank to peak second harmonic signal. The VCO presents a tuning range from 169-176GHz and delivers a peak power of -2.7dBm, biased at Vc=4V and Ic=46mA. To the best of authors' knowledge, this is the first HBT cross-coupled VCO designed above 100 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量