比较了N7 (7nm) NMOS Si块体finfet中与翅片尺寸相关的室温和热离子注入对砷磷的影响

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223691

Y. Sasaki, R. Ritzenthaler, A. De Keersgieter, T. Chiarella, S. Kubicek, E. Rosseel, A. Waite, J. I. del Agua Borniquel, B. Colombeau, S. Chew, M. Kim, T. Schram, S. Demuynck, W. Vandervorst, N. Horiguchi, D. Mocuta, A. Mocuta, A. Thean

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引用次数: 8

摘要

我们比较了具有5nm宽鳍片的NMOS Si体finfet的As和P扩展植入。P注入的finfet表现出离子水平的提高，室温(RT)离子注入(I/I) +15%，热离子注入(I/I) +9%，与As注入的finfet相比，在栅极长度(LG)为30nm时保持了匹配的短通道效应(SCE)。基于TCAD的计算结果表明，与As相比，在P扩展的情况下，P增加了激活掺杂浓度，即使在P扩散比As快的情况下，5nm翅片也能有效地抑制栅极下的关断态泄漏电流。

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A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

We compare As and P extension implants for NMOS Si bulk FinFETs with 5nm wide fins. P implanted FinFETs shows improved ION, +15% with Room Temperature (RT) ion implantation (I/I) and +9% with hot I/I, keeping matched Short Channel Effects (SCE) for gate length (LG) of 30nm compared with As implanted FinFETs. Based on TCAD work, P increases activated dopant concentration in extension compared with As and 5nm fin suppresses off state leakage current under the gate efficiently even in P extension case though P diffusion is faster than As.

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2015 Symposium on VLSI Technology (VLSI Technology)

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