一个V/sub / DD/和温度无关的CMOS电压参考电路

T. Matsuda, R. Minami, A. Kanamori, H. Iwata, T. Ohzone, S. Yamamoto, T. Ihara, S. Nakajima
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引用次数: 7

摘要

纯CMOS阈值基准电压(VTR)电路的温度(T)系数为5 μV/°C (T=60~+100°C),电源电压(VDD)灵敏度为0.1 mV/V (VDD=3-5 V)。n- mosfet的亚阈值电流特性和不同工作模式的结合提供了小的电压和温度依赖性。从n- mosfet的参考输出到栅极的反馈方案不仅稳定了输出,而且节省了芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A V/sub DD/ and temperature independent CMOS voltage reference circuit
A pure CMOS threshold voltage reference (VTR)circuit achieves temperature(T) coefficient of 5 μV/°C (T=60~+100 °C) and supply voltage(VDD) sensitivity of O.1 mV/V (VDD=3-5 V). The combination of subthreshold current characteristics and different operating modes in n-MOSFETs provides a small voltage and temperature dependence. A feedback scheme from the reference output to gates of n-MOSFETs not only stabilizes the output but also saves the die area.
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