{"title":"在无线传感器网络中的降噪亚阈值UWB LNA应用","authors":"A. Kumar, A. Dutta, S. Singh","doi":"10.1109/ICUWB.2012.6340418","DOIUrl":null,"url":null,"abstract":"In this paper, a low power, noise-cancelling subthreshold Ultra ideband (UWB) Low Noise Amplifier (LNA) is presented. In this work subthreshold driven Common Gate (CG) input stage is modified to provide wideband input matching and a current reuse noise cancelling technique is introduced to improve noise performance. Additionally, substantial reduction in power consumption is obtained by driving the MOS devices in subthreshold region. Circuit is simulated using Spectre simulator in UMC 180nm CMOS technology and achieved a gain of 12-13.2 dB (6-7.2 dB + 6dB loss in buffer) with a noise figure of 4-5dB over the band of 1.5-8.5 GHz. Proposed circuit consumes only 1.4mW from 1.5V supply. Hence the proposed circuit topology is very useful for WSN application.","PeriodicalId":260071,"journal":{"name":"2012 IEEE International Conference on Ultra-Wideband","volume":"257 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Noise-cancelled subthreshold UWB LNA for Wireless Sensor Network application\",\"authors\":\"A. Kumar, A. Dutta, S. Singh\",\"doi\":\"10.1109/ICUWB.2012.6340418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a low power, noise-cancelling subthreshold Ultra ideband (UWB) Low Noise Amplifier (LNA) is presented. In this work subthreshold driven Common Gate (CG) input stage is modified to provide wideband input matching and a current reuse noise cancelling technique is introduced to improve noise performance. Additionally, substantial reduction in power consumption is obtained by driving the MOS devices in subthreshold region. Circuit is simulated using Spectre simulator in UMC 180nm CMOS technology and achieved a gain of 12-13.2 dB (6-7.2 dB + 6dB loss in buffer) with a noise figure of 4-5dB over the band of 1.5-8.5 GHz. Proposed circuit consumes only 1.4mW from 1.5V supply. Hence the proposed circuit topology is very useful for WSN application.\",\"PeriodicalId\":260071,\"journal\":{\"name\":\"2012 IEEE International Conference on Ultra-Wideband\",\"volume\":\"257 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Ultra-Wideband\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICUWB.2012.6340418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Ultra-Wideband","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUWB.2012.6340418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
本文提出了一种低功耗、亚阈值降噪的超宽带低噪声放大器。在这项工作中,修改了亚阈值驱动的共门(CG)输入级以提供宽带输入匹配,并引入了电流复用降噪技术来改善噪声性能。此外,通过在亚阈值区域驱动MOS器件,大大降低了功耗。采用UMC 180nm CMOS技术的Spectre模拟器对电路进行了仿真,在1.5-8.5 GHz频段上,电路增益为12-13.2 dB(缓冲损耗为6-7.2 dB + 6dB),噪声系数为4-5dB。所提出的电路从1.5V电源中仅消耗1.4mW。因此,所提出的电路拓扑对于无线传感器网络的应用是非常有用的。
Noise-cancelled subthreshold UWB LNA for Wireless Sensor Network application
In this paper, a low power, noise-cancelling subthreshold Ultra ideband (UWB) Low Noise Amplifier (LNA) is presented. In this work subthreshold driven Common Gate (CG) input stage is modified to provide wideband input matching and a current reuse noise cancelling technique is introduced to improve noise performance. Additionally, substantial reduction in power consumption is obtained by driving the MOS devices in subthreshold region. Circuit is simulated using Spectre simulator in UMC 180nm CMOS technology and achieved a gain of 12-13.2 dB (6-7.2 dB + 6dB loss in buffer) with a noise figure of 4-5dB over the band of 1.5-8.5 GHz. Proposed circuit consumes only 1.4mW from 1.5V supply. Hence the proposed circuit topology is very useful for WSN application.