{"title":"基于TSV的三维集成电路非接触式测试存取机制","authors":"R. Rashidzadeh","doi":"10.1109/VTS.2013.6548904","DOIUrl":null,"url":null,"abstract":"In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.","PeriodicalId":138435,"journal":{"name":"2013 IEEE 31st VLSI Test Symposium (VTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Contactless test access mechanism for TSV based 3D ICs\",\"authors\":\"R. Rashidzadeh\",\"doi\":\"10.1109/VTS.2013.6548904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.\",\"PeriodicalId\":138435,\"journal\":{\"name\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 31st VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2013.6548904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 31st VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2013.6548904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Contactless test access mechanism for TSV based 3D ICs
In this paper, three coupling techniques for contactless TSV probing have been presented and their advantages and disadvantages are discussed. A contactless, noninvasive TSV probing scheme based on the principle of capacitive coupling is designed and simulated. The implemented scheme supports the high-density and the tight-pitch requirements for TSV probing.