SOI霍尔效应传感器工作温度高达270/spl度/C

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012811

L. Portmann, H. Ballan, M. Declercq

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引用次数: 2

摘要

介绍了一种工作温度高达270/spl°C的5伏全集成磁传感器的设计。该单片传感器采用部分耗尽(PD) 1 /spl mu/m SOI工艺制造，包括一个电阻霍尔板、一个放大器级和一个a /D转换器，提供温度稳定的8位数字磁场读数。该电路采用模拟技术对温度进行连续补偿。讨论了部分耗尽SOI所固有的设计问题，以及高温的限制。

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SOI Hall effect sensor operating up to 270/spl deg/C

The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270/spl deg/C is presented. Fabricated in a Partially Depleted (PD) 1 /spl mu/m SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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