洞察I/O氮化设备的HCI可靠性

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117681

C. Doyen, V. Yon, X. Garros, L. Basset, Tadeu Mota Frutuoso, C. Dagon, C. Diouf, X. Federspiel, V. Millon, F. Monsieur, C. Pribat, D. Roy

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引用次数: 0

摘要

热载流子注入(HCI)降解在先进技术中起着重要作用。我们在55nm MOS晶体管上对这种退化模式进行了广泛的分析，结果表明，对于大通道长度，$V_{G}=V_{D}$条件下的应力比$V_{G}=V_{Gibmax}$条件下的应力更为严重。这可归因于分布在整个通道中的额外降解机制，这可能出现在氮化样品上。

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Insight Into HCI Reliability on I/O Nitrided Devices

Hot carriers injection (HCI) degradation plays an important role in advanced technologies. We carried out an extensive analysis of this degradation mode on 55nm MOS transistors and showed that for large channel lengths, a stress at $V_{G}=V_{D}$ becomes more critical than at $V_{G}= V_{Gibmax}$ condition. This is imputable to an additional degradation mechanism distributed throughout the channel, which likely appears on nitrided samples.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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