An enhanced model for planar inductors in CMOS technology

This paper presents an improved approach to model various spiral structures, which are widely employed in silicon technology. A turn-oriented model with closed form estimations is employed to depict the characteristics of spirals in the low GHz frequency band. Generalized formulas that eliminate complex 3-D electromagnetic analysis are derived for such passive components. The compact model, which is directly simplified from the enhanced model, provides a tradeoff between self-resonant frequency and quality factor under the standard CMOS technology.