死区时间对集成和离散DC-DC变换器辐射发射的影响

2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2019-10-01 DOI:10.1109/EMCCompo.2019.8919946

Josip Bačmaga, R. Blečić, Fabio Pareschi, G. Setti, A. Barić

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引用次数: 1

摘要

采用0.18 μm高压CMOS技术设计了一种集成同步降压变换器，分析了控制信号之间的死区时间对辐射发射的影响。所设计的转换器能够为集成或片外晶体管开关设置控制信号的死区时间。设计了测试板，分析了死区时间对整合式和离散式同步降压变换器辐射发射的影响。在半消声室中测量了整合式和离散式变换器的辐射发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Dead Times on Radiated Emissions of Integrated and Discrete DC-DC Converter

An integrated synchronous buck converter, designed in a 0.18-μm high-voltage CMOS technology, is analyzed to investigate the impact of the dead times between the control signals on the radiated emissions. The designed converter enables to set the dead times of the control signals for both integrated or off-chip transistor switches. The test boards are designed to analyze the impact of dead times on radiated emissions for integrated and discrete synchronous buck converter. The radiated emissions of both integrated and discrete converter are measured in a semi-anechoic chamber.

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2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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