{"title":"带变压器谐振器的18ghz硅双极压控振荡器","authors":"A. Scuderi, E. Ragonese, T. Biondi, G. Palmisano","doi":"10.1109/RFIC.2006.1651186","DOIUrl":null,"url":null,"abstract":"A silicon bipolar voltage-controlled oscillator for 17-GHz ISM band is presented. The VCO is composed of a core oscillating at 9 GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1 GHz from 16.4 to 20.5 GHz and a phase noise as low as -109 dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5 GHz. To design and optimize the resonator, a lumped scalable model for differentially driven inductors and transformers was used. This model is presented and validated up to 20 GHz by comparison with experimental data","PeriodicalId":194071,"journal":{"name":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","volume":"5 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 18-GHz silicon bipolar VCO with transformer-based resonator\",\"authors\":\"A. Scuderi, E. Ragonese, T. Biondi, G. Palmisano\",\"doi\":\"10.1109/RFIC.2006.1651186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon bipolar voltage-controlled oscillator for 17-GHz ISM band is presented. The VCO is composed of a core oscillating at 9 GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1 GHz from 16.4 to 20.5 GHz and a phase noise as low as -109 dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5 GHz. To design and optimize the resonator, a lumped scalable model for differentially driven inductors and transformers was used. This model is presented and validated up to 20 GHz by comparison with experimental data\",\"PeriodicalId\":194071,\"journal\":{\"name\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"volume\":\"5 8\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2006.1651186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2006.1651186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 18-GHz silicon bipolar VCO with transformer-based resonator
A silicon bipolar voltage-controlled oscillator for 17-GHz ISM band is presented. The VCO is composed of a core oscillating at 9 GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1 GHz from 16.4 to 20.5 GHz and a phase noise as low as -109 dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5 GHz. To design and optimize the resonator, a lumped scalable model for differentially driven inductors and transformers was used. This model is presented and validated up to 20 GHz by comparison with experimental data
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
