纳米级CMOS的自组装单层应用

Tejas R. Naik, V. Rao
{"title":"纳米级CMOS的自组装单层应用","authors":"Tejas R. Naik, V. Rao","doi":"10.1109/INEC.2016.7589436","DOIUrl":null,"url":null,"abstract":"As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"108 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Self assembled monolayer applications for nano-scale CMOS\",\"authors\":\"Tejas R. Naik, V. Rao\",\"doi\":\"10.1109/INEC.2016.7589436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS.\",\"PeriodicalId\":416565,\"journal\":{\"name\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"108 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2016.7589436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

随着CMOS技术进入10纳米以下的节点,为了获得规模化的好处,需要不同的技术、材料和工艺,各种可靠性、可变性和功耗问题都是器件小型化的挑战。集成自下而上的过程对于满足材料厚度和可变性要求的缩放目标至关重要。在目前的工作中,我们展示了使用自组装单层来解决纳米级CMOS的可靠性和功能问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self assembled monolayer applications for nano-scale CMOS
As the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信